III-Nitrides for Energy Conversion and Solid State Lighting

Invited Speaker:

  • Dibakar Das, University of Hyderabad, India
    Surface modification of III-Nitride epilayers by Chemical Mechanical Planarization (CMP)
  • Holger Eisele, Technical University of Berlin, Germany
    Is electron accumulation in InN intrinsic or may it be a material for photovoltaic applications?
  • Kazushige Horio, Shibaura Institute of Technology, Japan
    Trapping and breakdown in GaN devices: A simulation study
  • Joon Seop Kwak, Sunchon National University, South Korea
    Recent progress in fabrication process for highly efficient GaN LEDs
  • Gaudenzio Meneghesso, University of Padova, Italy
    Power GaN HEMTs for efficient energy conversion: Parassitic and reliability issues

 

 

 

 

 

 

Workshop Chair:

  • Enrique Calleja Pardo, Polytechnical University of Madrid, Spain
Operating Organization

OAHOST
Sponsors
UESTC
University of Electronic Science and Technology of China

UNAM


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Springer